FDD3N50NZ - описание и поиск аналогов

October 2009 UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description RDS(on) = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 6.2nC) stripe, DMOS technology. Low Crss ( Typ. 2.5pF) This advance technology has been esp

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD3N50NZ www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

November 2013 FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF) on

FDD3N50NZTM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoH

February 2007 TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially ta

FDD3N40TM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS