SIHFP450 Todos los transistores

 

SIHFP450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFP450
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-247
 

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SIHFP450 Datasheet (PDF)

 ..1. Size:1560K  vishay
irfp450 sihfp450.pdf pdf_icon

SIHFP450

IRFP450, SiHFP450Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 150COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead (P

 0.1. Size:1566K  vishay
irfp450lc sihfp450lc.pdf pdf_icon

SIHFP450

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

 0.2. Size:302K  vishay
irfp450a sihfp450a.pdf pdf_icon

SIHFP450

IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu

 0.3. Size:1570K  infineon
irfp450lc sihfp450lc.pdf pdf_icon

SIHFP450

IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration

Otros transistores... STWA48N60DM2 , STWA48N60M2 , VQ1000J , VQ1000P , IRF830L , IRF840AL , SIHFB20N50K , IRFD113 , 2N7000 , SIHFP460 , SIHFP460A , SIHLR120 , SIHLU120 , SI1016X , SI1024X , SI1078X , SI1900DL .

History: HYG060P04LQ1V | SML1248NC2A | HM4430A | BUZ310 | IRF200B211 | APTM50AM24SCG | IRFH5306

 

 
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