SIHFP450 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFP450
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 720 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET SIHFP450
Principales características: SIHFP450
irfp450 sihfp450.pdf
IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (P
irfp450lc sihfp450lc.pdf
IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration
irfp450a sihfp450a.pdf
IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu
irfp450lc sihfp450lc.pdf
IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration
Otros transistores... STWA48N60DM2 , STWA48N60M2 , VQ1000J , VQ1000P , IRF830L , IRF840AL , SIHFB20N50K , IRFD113 , AON7408 , SIHFP460 , SIHFP460A , SIHLR120 , SIHLU120 , SI1016X , SI1024X , SI1078X , SI1900DL .
History: SSI1N60A | SSS2N80A | ZVN4306GTC | SST65R600S2E | MTP4409H8
History: SSI1N60A | SSS2N80A | ZVN4306GTC | SST65R600S2E | MTP4409H8
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