FDD4141F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2013FDD4141_F085P-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeaturesGeneral Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer

July 2007FDD4141tmP-Channel PowerTrench MOSFET -40V, -50A, 12.3mFeatures General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Adeliver low rDS(on) and optimized Bvdss capability to offer Hig

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4141-F085P-Channel PowerTrench MOSFET-40V, -50A, 12.3mGeneral DescriptionFeaturesThis P-Channel MOSFET has been produced using ON Semiconductors proprietary PowerTrench technology to Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7Adeliver low rDS(on) and optimized Bvdss capability to offer Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4Asuperior performance be

FDD4141www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle