FDD4141F085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD4141F085  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm

Encapsulados: TO252 DPAK

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FDD4141F085 datasheet

 7.1. Size:343K  fairchild semi
 fdd4141 f085.pdf pdf_icon

FDD4141F085

November 2013 FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A deliver low rDS(on) and optimized Bvdss capability to offer

 7.2. Size:237K  fairchild semi
 fdd4141.pdf pdf_icon

FDD4141F085

July 2007 FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A deliver low rDS(on) and optimized Bvdss capability to offer Hig

 7.3. Size:451K  onsemi
 fdd4141.pdf pdf_icon

FDD4141F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:326K  onsemi
 fdd4141-f085.pdf pdf_icon

FDD4141F085

FDD4141-F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m General Description Features This P-Channel MOSFET has been produced using ON Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A deliver low rDS(on) and optimized Bvdss capability to offer Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A superior performance be

MOSTRAR MÁS

Otros transistores... FDD3706, FDD3860, STT626, FDD390N15A, FDD3N40, STT622S, FDD3N50NZ, FDD4141, AO4468, FDD4243, FDD4243F085, FDD4685, FDD4685F085, FDD5353, FDD5612, FDD5614P, FDD5670