FDD4141F085 - описание и поиск аналогов

November 2013 FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A deliver low rDS(on) and optimized Bvdss capability to offer

July 2007 FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A deliver low rDS(on) and optimized Bvdss capability to offer Hig

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4141-F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3m General Description Features This P-Channel MOSFET has been produced using ON Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 12.3m at VGS = -10V, ID = -12.7A deliver low rDS(on) and optimized Bvdss capability to offer Max rDS(on) = 18.0m at VGS = -4.5V, ID = -10.4A superior performance be

FDD4141 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle