SI3460BDV Todos los transistores

 ..1. Size:242K  vishay
 si3460bdv.pdf

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica

 6.1. Size:211K  vishay
 si3460bd.pdf

Si3460BDV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.027 at VGS = 4.5 V 8 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC 0.032 at VGS = 2.5 V 20 8 9 nC 0.040 at VGS = 1.8 V 8 APPLICATIONS Load Switch for Portable Applica

 8.1. Size:177K  vishay
 si3460dv.pdf

Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET 0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested 0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6

 8.2. Size:612K  vishay
 si3460dd si3460ddv.pdf

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET 20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested 0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/EC APPL

 8.3. Size:612K  vishay
 si3460ddv.pdf

Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET 20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested 0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/EC APPL

 8.4. Size:862K  cn vbsemi
 si3460dv-t1.pdf

SI3460DV-T1 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/