SI4403DDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4403DDYwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen III p-channel power MOSFETD 5D 6 1.8 V rated RDS(on)D 7 100% Rg tested8 Material categorization: for definitions of compliance please see www.vishay.com/doc?999124G33APPLICATIONSSSS22SS11 Adapter switchSTop View

Si4403DYNew ProductVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.017 @ VGS = 4.5 V9D Load Switch20 0.023 @ VGS = 2.5 V 7 Game Stations0.032 @ VGS = 1.8 V 6 Notebooks DesktopsSSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDP-Channel

Si4403BDYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5- 20 Compliant to RoHS Directive 2002/95/EC0.032 at VGS = - 1.8 V - 7.2SO-8 SS1 8 D S D 2 7 S3 6 D GG

Si4403BDYVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.017 at VGS = - 4.5 V - 9.9 TrenchFET Power MOSFETs 0.023 at VGS = - 2.5 V - 8.5- 20 Compliant to RoHS Directive 2002/95/EC0.032 at VGS = - 1.8 V - 7.2SO-8 SS1 8 D S D 2 7 S3 6 D GG

New ProductSi4403CDYVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0155 at VGS = - 4.5 V - 13.4 TrenchFET Power MOSFET- 20 0.0195 at VGS = - 2.5 V - 12 36.5 nC 100 % Rg Tested0.0250 at VGS = - 1.8 V - 10.5 100 % UIS Tested Compliant to