SI4431BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI4431BDY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SO-8
SI4431BDY Datasheet (PDF)
si4431bdy.pdf

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)
si4431bd.pdf

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)
si4431ady.pdf

Si4431ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 10 V7.230300.052 @ VGS = 4.5 V 5.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431ADY-T1P-Channel MOSFETSi4431ADY-T1E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS (TA
si4431dy.pdf

Si4431DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% UIS Tested0.040 @ VGS = 10 V "5.830300.070 @ VGS = 4.5 V "4.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431DY-T1P-Channel MOSFETSi4431DY-T1E3 (Lead (Pb)-Free)ABSOLUTE MAXIMUM RAT
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