SI4946CDY Todos los transistores

 ..1. Size:225K  vishay
 si4946cdy.pdf

Si4946CDY www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES SO-8 Dual D2 TrenchFET power MOSFET D2 5 D1 6 100 % Rg tested D1 7 Material categorization 8 for definitions of compliance please see www.vishay.com/doc?99912 4 APPLICATIONS G2 3 3 S2 S2 2 2 DC/DC converter G1 D1 D2 G 1 1 Load switch S1 Top View Inve

 8.1. Size:254K  vishay
 si4946be.pdf

Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

 8.2. Size:70K  vishay
 si4946ey.pdf

Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.055 @ VGS = 10 V 4.5 Pb-free Available 60 60 0.075 @ VGS = 4.5 V 3.9 SO-8 D S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G G2 4 D2 5 Top View S Ordering Information Si4946EY Si4946EY-

 8.3. Size:256K  vishay
 si4946bey.pdf

Si4946BEY Vishay Siliconix Dual N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET 60 9.2 nC 0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

 8.4. Size:1761K  kexin
 si4946dy.pdf

SMD Type MOSFET Dual N-Channel MOSFET SI4946DY (KI4946DY) SOP-8 Features VDS (V) = 60V 1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V) 1 Source1 5 Drain2 6 Drain2 2 Gate1 175 C Maximum Junction Temperature 7 Drain1 3 Source2 8 Drain1 4 Gate2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25

 8.5. Size:947K  cn vbsemi
 si4946bey-t1.pdf

SI4946BEY-T1 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha