SI4966DY Todos los transistores

 ..1. Size:238K  vishay
 si4966dy.pdf

Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4

 9.1. Size:235K  vishay
 si4967dy.pdf

Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.023 at VGS = - 4.5 V - 7.5 TrenchFET Power MOSFETs 1.8 V Rated 0.030 at VGS = - 2.5 V - 12 - 6.7 Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 D1 8 G

 9.2. Size:237K  vishay
 si4965dy.pdf

Si4965DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.021 at VGS = - 4.5 V - 8.0 TrenchFET Power MOSFETs 1.8 V Rated 0.027 at VGS = - 2.5 V - 8 - 7.0 Compliant to RoHS Directive 2002/95/EC 0.040 at VGS = - 1.8 V - 5.8 S1 S2 SO-8 S1 1 D1 8 G1

 9.3. Size:89K  vishay
 si4963dy 2.pdf

Si4963DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Available Compliant 0.033 @ VGS = -4.5 V -6.2 -20 -20 0.050 @ VGS = -2.5 V -5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 D1 D2 Top View P-Channel MOSFET P-Channel MOSFET Ordering Info

 9.4. Size:223K  vishay
 si4963bdy.pdf

Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.032 at VGS = - 4.5 V - 6.5 Compliant to RoHS Directive 2002/95/EC - 20 0.050 at VGS = - 2.5 V - 5.2 S1 S2 SO-8 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 Top View D1 D2 Ordering Informat

 9.5. Size:39K  vishay
 si4963dy.pdf

Si4963DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.033 @ VGS = -4.5 V -6.2 -20 -20 0.050 @ VGS = - 2.5 V -5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet