SI4966DY Specs and Replacement
Type Designator: SI4966DY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SO-8
SI4966DY substitution
- MOSFET ⓘ Cross-Reference Search
SI4966DY datasheet
si4966dy.pdf
Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G2 4 ... See More ⇒
si4967dy.pdf
Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.023 at VGS = - 4.5 V - 7.5 TrenchFET Power MOSFETs 1.8 V Rated 0.030 at VGS = - 2.5 V - 12 - 6.7 Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 D1 8 G... See More ⇒
si4965dy.pdf
Si4965DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.021 at VGS = - 4.5 V - 8.0 TrenchFET Power MOSFETs 1.8 V Rated 0.027 at VGS = - 2.5 V - 8 - 7.0 Compliant to RoHS Directive 2002/95/EC 0.040 at VGS = - 1.8 V - 5.8 S1 S2 SO-8 S1 1 D1 8 G1 ... See More ⇒
si4963dy 2.pdf
Si4963DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D Lead (Pb)-Free Version is RoHS Available Compliant 0.033 @ VGS = -4.5 V -6.2 -20 -20 0.050 @ VGS = -2.5 V -5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 D1 D2 Top View P-Channel MOSFET P-Channel MOSFET Ordering Info... See More ⇒
Detailed specifications: SI4435FDY, SI4447DY, SI4804CDY, SI4848ADY, SI4850BDY, SI4925BDY, SI4936ADY, SI4946CDY, AO4407, SI5948DU, SI7113ADN, SI7153DN, SI7218DN, SI7615CDN, SI7900AEDN, SI7972DP, SI8823EDB
Keywords - SI4966DY MOSFET specs
SI4966DY cross reference
SI4966DY equivalent finder
SI4966DY pdf lookup
SI4966DY substitution
SI4966DY replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP70T03AH | LSB60R280HT | EMB20N03V
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent
