SI4966DY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4966DY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 7.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 40
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
SO-8
SI4966DY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4966DY
Datasheet (PDF)
..1. Size:238K vishay
si4966dy.pdf 
Si4966DYVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4
9.1. Size:235K vishay
si4967dy.pdf
Si4967DYVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.023 at VGS = - 4.5 V - 7.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.030 at VGS = - 2.5 V - 12 - 6.7 Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 1.8 V - 5.4S1 S2SO-8S1 1 D18G
9.2. Size:237K vishay
si4965dy.pdf
Si4965DYVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = - 4.5 V - 8.0 TrenchFET Power MOSFETs: 1.8 V Rated0.027 at VGS = - 2.5 V - 8 - 7.0 Compliant to RoHS Directive 2002/95/EC0.040 at VGS = - 1.8 V - 5.8S1 S2SO-8S1 1 D18G1
9.3. Size:89K vishay
si4963dy 2.pdf
Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHSAvailableCompliant0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = -2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25D1 D2Top ViewP-Channel MOSFET P-Channel MOSFETOrdering Info
9.4. Size:223K vishay
si4963bdy.pdf
Si4963BDYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.032 at VGS = - 4.5 V - 6.5 Compliant to RoHS Directive 2002/95/EC- 200.050 at VGS = - 2.5 V - 5.2S1 S2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25Top ViewD1 D2Ordering Informat
9.5. Size:39K vishay
si4963dy.pdf
Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = - 2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet
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