SIA923AEDJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIA923AEDJ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 7.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
Paquete / Cubierta: SOT-363 SC-70-6
Búsqueda de reemplazo de MOSFET SIA923AEDJ
SIA923AEDJ Datasheet (PDF)
sia923aedj.pdf
SiA923AEDJwww.vishay.comVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally Enhanced PowerPAK SC-70 Package0.054 at VGS = -4.5 V -4.5 a- Small Footprint Area0.070 at VGS = -2.5 V -4.5 a- Low On-Resistance-20 9.5 nC0.104 at VGS = -1.8 V -4.5 a Typical ESD Prot
sia923edj.pdf
SiA923EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5aPackage- 20 9.5 nC0.104 at VGS = - 1.8 V - 4.5a - Small Fo
sia922edj.pdf
SiA922EDJwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.064 at VGS = 4.5 V 4.5a- Small footprint area- Low on-resistance0.072 at VGS = 3.0 V 4.5a30 3.5 nC Typical ESD protection: 1500 V (HBM)0.080 at
sia921ed.pdf
SiA921EDJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.059 at VGS = - 4.5 V - 4.5a- 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5aPackage- Small Footprint Area- Low On-Resistance
sia929dj.pdf
New ProductSiA929DJVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Gen III Power MOSFET0.064 at VGS = - 10 V - 4.5a Thermally Enhanced PowerPAK0.078 at VGS = - 4.5 V - 30- 4.5a 6.6 nCSC-70 Package0.120 at VGS = - 2.5
sia920dj.pdf
New ProductSiA920DJVishay SiliconixDual N-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.027 at VGS = 4.5 V 4.5 Thermally Enhanced PowerPAK0.031 at VGS = 2.5 V 4.5SC-70 Package8 0.036 at Vgs = 1.8 V 4.5 4.8 nC- Small Footprint Area0.
sia921edj.pdf
SiA921EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 0.059 at VGS = - 4.5 V Package- 4.5a- 20 4.9 nC- Small Footprint Area0.098 at VGS = - 2.5 V - 4.5a- Low On-Resistance Typical ESD Protection: 1700 VPowerPAK SC-70-6 Dual
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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