SIHP120N60E Todos los transistores

 

SIHP120N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHP120N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO-220AB
 

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SIHP120N60E Datasheet (PDF)

 ..1. Size:124K  vishay
 sihp120n60e.pdf pdf_icon

SIHP120N60E

SiHP120N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD 4th generation E series technologyTO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))G Reduced switching and conduction losses Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DS please see www.vishay.com/doc?999

 8.1. Size:167K  vishay
 sihp12n65e.pdf pdf_icon

SIHP120N60E

SiHP12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

 8.2. Size:210K  vishay
 sihp12n60e.pdf pdf_icon

SIHP120N60E

SiHP12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13

 8.3. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHP120N60E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

MOSTRAR MÁS

Otros transistores... SIHA22N60AE , SIHA22N60AEL , SIHD4N80E , SIHG17N80E , SIHG70N60EF , SIHH180N60E , SIHH27N60EF , SIHP11N80E , STP65NF06 , SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP , SIR610DP , SIR624DP , SIR626DP , SIR638DP .

History: SI9945DY | WMM037N10HGS | WML80R720S

 

 
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