SIHP120N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHP120N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 179 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 65 nS
Conductancia de drenaje-sustrato (Cd): 72 pF
Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHP120N60E
SIHP120N60E Datasheet (PDF)
sihp120n60e.pdf
SiHP120N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD 4th generation E series technologyTO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))G Reduced switching and conduction losses Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DS please see www.vishay.com/doc?999
sihp12n65e.pdf
SiHP12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M
sihp12n60e.pdf
SiHP12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13
sihp12n50c sihb12n50c sihf12n50c.pdf
SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK
sihp12n50e.pdf
SiHP12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi
sihb12n50c sihf12n50c sihp12n50c.pdf
SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK
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