SIHP120N60E Todos los transistores

 ..1. Size:124K  vishay
 sihp120n60e.pdf

SiHP120N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D 4th generation E series technology TO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) G Reduced switching and conduction losses Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?999

 8.1. Size:167K  vishay
 sihp12n65e.pdf

SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M

 8.2. Size:210K  vishay
 sihp12n60e.pdf

SiHP12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced Switching and Conduction Losses Qg max. (nC) 58 Ultra Low Gate Charge (Qg) Qgs (nC) 6 Avalanche Energy Rated (UIS) Qgd (nC) 13

 8.3. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

 8.4. Size:158K  vishay
 sihp12n50e.pdf

SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi

 8.5. Size:179K  vishay
 sihb12n50c sihf12n50c sihp12n50c.pdf

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK