SIHP120N60E - параметры транзистора MOSFET, его аналоги, datasheet

SIHP120N60E Datasheet (PDF)

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SiHP120N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD 4th generation E series technologyTO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))G Reduced switching and conduction losses Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DS please see www.vishay.com/doc?999

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SiHP12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

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SiHP12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13

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sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK