Справочник MOSFET. SIHP120N60E

 

SIHP120N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHP120N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 179 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для SIHP120N60E

 

 

SIHP120N60E Datasheet (PDF)

 ..1. Size:124K  vishay
 sihp120n60e.pdf

SIHP120N60E SIHP120N60E

SiHP120N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD 4th generation E series technologyTO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))G Reduced switching and conduction losses Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DS please see www.vishay.com/doc?999

 8.1. Size:167K  vishay
 sihp12n65e.pdf

SIHP120N60E SIHP120N60E

SiHP12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

 8.2. Size:210K  vishay
 sihp12n60e.pdf

SIHP120N60E SIHP120N60E

SiHP12N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced Switching and Conduction LossesQg max. (nC) 58 Ultra Low Gate Charge (Qg)Qgs (nC) 6 Avalanche Energy Rated (UIS)Qgd (nC) 13

 8.3. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf

SIHP120N60E SIHP120N60E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

 8.4. Size:158K  vishay
 sihp12n50e.pdf

SIHP120N60E SIHP120N60E

SiHP12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

 8.5. Size:179K  vishay
 sihb12n50c sihf12n50c sihp12n50c.pdf

SIHP120N60E SIHP120N60E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

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