SIS472BDN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIS472BDN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 287 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: POWERPAK-1212-8

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SIS472BDN datasheet

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SIS472BDN

SiS472BDN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 S S APPLICATIONS 3 S D 4 S 1 G DC/DC power supplies Top View Bottom View

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SIS472BDN

SiS472DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a, g Qg (Typ.) Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET 30 9.8 nC 0.0124 at VGS = 4.5 V 20 Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested PowerPAK 1212-8 100 % UI

 8.2. Size:561K  vishay
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SIS472BDN

SiS472ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a, g Qg (Typ.) Optimized for High-Side Synchronous Rectifier Operation 0.0085 at VGS = 10 V 24 30 12.8 nC 100 % Rg and UIS Tested 0.0105 at VGS = 4.5 V 24 Material categorization For definitions of compliance please see P

 9.1. Size:574K  vishay
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SIS472BDN

New Product SiS476DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) Definition 0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET 30 22.5 nC 0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212

MOSTRAR MÁS

Otros transistores... SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, IRF640N, SIS488DN, SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN