SQ2319ADS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQ2319ADS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 10.5 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET SQ2319ADS
SQ2319ADS Datasheet (PDF)
sq2319ads.pdf
SQ2319ADSwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.075 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.145 Material categorization: ID (A) -4.6for definitions of compliance please see Configuration Singlewww.vis
sq2319es.pdf
SQ2319ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.075 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.145 AEC-Q101 QualifiedcID (A) - 4.6 100 % Rg and UIS TestedConfiguration Single Complia
sq2318es.pdf
SQ2318ESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.040 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 AEC-Q101 QualifiedcID (A) 6 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS
sq2318aes.pdf
SQ2318AESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.031 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.036 Material categorization:ID (A) 8For definitions of compliance please see Configuration Singleww
sq2310es.pdf
SQ2310ESwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.030 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 QualifiedcRDS(on) () at VGS = 1.5 V 0.042 100 % Rg and UIS TestedID (A) 6 Co
sq2315es.pdf
SQ2315ESwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.050 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.068 AEC-Q101 QualifiedcRDS(on) () at VGS = - 1.8 V 0.092 100 % Rg and UIS TestedID (A) -
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