SQ2361AEES Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQ2361AEES

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: SOT-23

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SQ2361AEES datasheet

 ..1. Size:255K  vishay
 sq2361aees.pdf pdf_icon

SQ2361AEES

SQ2361AEES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 Typical ESD protection 800 V RDS(on) ( ) at VGS = -10 V 0.170 AEC-Q101 qualified RDS(on) ( ) at VGS = -4.5 V 0.230 100 % Rg and UIS tested ID (A) -2.9 Material categorization Configuration Single for

 8.1. Size:254K  vishay
 sq2361es.pdf pdf_icon

SQ2361AEES

SQ2361ES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.177 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.246 Material categorization ID (A) -2.8 for definitions of compliance please see Configuration Single

 8.2. Size:220K  vishay
 sq2361ees.pdf pdf_icon

SQ2361AEES

SQ2361EES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Typical ESD Protection 800 V RDS(on) ( ) at VGS = - 10 V 0.150 AEC-Q101 Qualified RDS(on) ( ) at VGS = - 4.5 V 0.200 100 % Rg and UIS Tested ID (A) - 2.5 Material categorization S For definitions of co

 9.1. Size:251K  vishay
 sq2362es.pdf pdf_icon

SQ2361AEES

SQ2362ES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.068 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.075 Material categorization ID (A) 4.3 for definitions of compliance please see Configuration Single www.vis

MOSTRAR MÁS

Otros transistores... SIZ346DT, SIZ988DT, SIZF914DT, SQ1421EDH, SQ1440EH, SQ1912EH, SQ1922EEH, SQ2319ADS, 4435, SQ3418AEEV, SQ3419AEEV, SQ3425EV, SQ3426AEEV, SQ3427AEEV, SQ3461EV, SQ3585EV, SQ3987EV