All MOSFET. SQ2361AEES Datasheet

 

SQ2361AEES Datasheet and Replacement


   Type Designator: SQ2361AEES
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: SOT-23
 

 SQ2361AEES substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQ2361AEES Datasheet (PDF)

 ..1. Size:255K  vishay
 sq2361aees.pdf pdf_icon

SQ2361AEES

SQ2361AEESwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Typical ESD protection: 800 VRDS(on) () at VGS = -10 V 0.170 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.230 100 % Rg and UIS testedID (A) -2.9 Material categorization:Configuration Singlefor

 8.1. Size:254K  vishay
 sq2361es.pdf pdf_icon

SQ2361AEES

SQ2361ESwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.177 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.246 Material categorization: ID (A) -2.8for definitions of compliance please seeConfiguration Single

 8.2. Size:220K  vishay
 sq2361ees.pdf pdf_icon

SQ2361AEES

SQ2361EESwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Typical ESD Protection: 800 VRDS(on) () at VGS = - 10 V 0.150 AEC-Q101 QualifiedRDS(on) () at VGS = - 4.5 V 0.200 100 % Rg and UIS TestedID (A) - 2.5 Material categorization:S For definitions of co

 9.1. Size:251K  vishay
 sq2362es.pdf pdf_icon

SQ2361AEES

SQ2362ESwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.068 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.075 Material categorization: ID (A) 4.3for definitions of compliance please see Configuration Single www.vis

SHOW MORE

Datasheet: SIZ346DT , SIZ988DT , SIZF914DT , SQ1421EDH , SQ1440EH , SQ1912EH , SQ1922EEH , SQ2319ADS , 2SK3568 , SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV , SQ3585EV , SQ3987EV .

History: DMP22M2UPS | UTT30P06G-TM3-T | ISCNH371D | HM2302F | SIZF914DT | NDP610AE | NTD5413NT4G

Keywords - SQ2361AEES MOSFET datasheet

 SQ2361AEES cross reference
 SQ2361AEES equivalent finder
 SQ2361AEES lookup
 SQ2361AEES substitution
 SQ2361AEES replacement

 

 
Back to Top

 


 
.