SQ3419AEEV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQ3419AEEV

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.061 Ohm

Encapsulados: TSOP-6

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SQ3419AEEV datasheet

 ..1. Size:268K  vishay
 sq3419aeev.pdf pdf_icon

SQ3419AEEV

SQ3419AEEV www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.061 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.093 Typical ESD protection 800 V ID (A) -6.9 Material categorization Configuration Single for defi

 8.1. Size:209K  vishay
 sq3419eev.pdf pdf_icon

SQ3419AEEV

SQ3419EEV www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.050 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.078 100 % Rg and UIS Tested ID (A) - 7.4 Typical ESD Protection 800 V

 9.1. Size:84K  vishay
 sq3418aeev.pdf pdf_icon

SQ3419AEEV

Work-In-Progress SQ3418AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Typical ESD protection 800 V RDS(on) ( ) at VGS = 10 V 0.032 AEC-Q101 qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.042 100 % Rg and UIS tested ID (A) 8 Material categorization Configuration Singl

 9.2. Size:210K  vishay
 sq3418eev.pdf pdf_icon

SQ3419AEEV

SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.048 Typical ESD Protection 800 V ID (A) 8 AEC-Q101 Qualifiedd Configuration Single 100 % Rg an

MOSTRAR MÁS

Otros transistores... SIZF914DT, SQ1421EDH, SQ1440EH, SQ1912EH, SQ1922EEH, SQ2319ADS, SQ2361AEES, SQ3418AEEV, SKD502T, SQ3425EV, SQ3426AEEV, SQ3427AEEV, SQ3461EV, SQ3585EV, SQ3987EV, SQ3989EV, SQ4005EY