SQ3419AEEV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQ3419AEEV
Código: 8W
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 5 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 6.9 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 8.4 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 130 pF
Resistencia entre drenaje y fuente RDS(on): 0.061 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET SQ3419AEEV
SQ3419AEEV Datasheet (PDF)
sq3419aeev.pdf
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SQ3419AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.061 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.093 Typical ESD protection 800 VID (A) -6.9 Material categorization:Configuration Singlefor defi
sq3419eev.pdf
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SQ3419EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.050 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.078 100 % Rg and UIS TestedID (A) - 7.4 Typical ESD Protection 800 V
sq3418aeev.pdf
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Work-In-ProgressSQ3418AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Typical ESD protection 800 VRDS(on) () at VGS = 10 V 0.032 AEC-Q101 qualifieddRDS(on) () at VGS = 4.5 V 0.042 100 % Rg and UIS testedID (A) 8 Material categorization:Configuration Singl
sq3418eev.pdf
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SQ3418EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.048 Typical ESD Protection 800 VID (A) 8 AEC-Q101 QualifieddConfiguration Single 100 % Rg an
sq3418ev.pdf
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SQ3418EVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.032 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.042 Material categorization: ID (A) 8for definitions of compliance please see Configuration Singlewww.vi
sq3410ev.pdf
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SQ3410EVwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0175 Material categorization:RDS(on) () at VGS = 4.5 V 0.0213For definitions of compliance please seeID (A) 8www.vishay.com/doc?99912
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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