SQ3425EV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQ3425EV

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 178 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TSOP-6

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SQ3425EV datasheet

 ..1. Size:276K  vishay
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SQ3425EV

SQ3425EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -20 AEC-Q101 qualified c RDS(on) ( ) at VGS = -4.5 V 0.060 100 % Rg and UIS tested RDS(on) ( ) at VGS = -2.5 V 0.100 Material categorization ID (A) -7.4 for definitions of compliance please see Configuration Single w

 9.1. Size:258K  vishay
sq3426aeev.pdf pdf_icon

SQ3425EV

SQ3426AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 Typical ESD protection 800 V HBM RDS(on) ( ) at VGS = 10 V 0.042 AEC-Q101 qualified RDS(on) ( ) at VGS = 4.5 V 0.063 100 % Rg and UIS tested ID (A) 7 Material categorization Configuration Single for definit

 9.2. Size:235K  vishay
sq3427ev.pdf pdf_icon

SQ3425EV

SQ3427EV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.095 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.135 Material categorization ID (A) -5.3 for definitions of compliance please see Configuration Sing

 9.3. Size:254K  vishay
sq3427aeev.pdf pdf_icon

SQ3425EV

SQ3427AEEV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.095 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.135 Typical ESD protection 800 V ID (A) -5.3 Configuration Single Material categorization for

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