SQ4940AEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQ4940AEY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 4 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 28.4 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 103 pF
Resistencia entre drenaje y fuente RDS(on): 0.024 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET SQ4940AEY
SQ4940AEY Datasheet (PDF)
sq4940aey.pdf
SQ4940AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.024 AEC-Q101 qualified dRDS(on) () at VGS = 4.5 V 0.029 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual
sq4940ey.pdf
SQ4940EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 100 % Rg and UIS TestedID (A) 7 AEC-Q101 QualifiedcConfiguration Dual Compliant to R
sq4949ey.pdf
SQ4949EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.065 100 % Rg and UIS TestedID (A) per leg - 7.5 AEC-Q101 QualifiedcConfiguration Dual
sq4946aey.pdf
SQ4946AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.040 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.055 Material categorization:For definitions of compliance please seeID (A) per leg 7www.vishay.com/d
sq4942ey.pdf
SQ4942EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 8 AEC-Q101 QualifieddConfiguration Dual Compliant to R
sq4946ey.pdf
SQ4946EYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.055RoHS*ID (A) 4.5AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability Testing Characterization OngoingD1
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
