SQJ416EP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ416EP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SO-8

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SQJ416EP datasheet

 ..1. Size:282K  vishay
 sqj416ep.pdf pdf_icon

SQJ416EP

SQJ416EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.030 100 % Rg and UIS tested ID (A) 27 Material categorization Configuration Single for definitions of compliance please see Package PowerPAK SO-8L www.vishay.com/

 9.1. Size:154K  vishay
 sqj410ep.pdf pdf_icon

SQJ416EP

SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0039 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0042 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.

 9.2. Size:267K  vishay
 sqj414ep.pdf pdf_icon

SQJ416EP

SQJ414EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 S 4 D 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 30 G RDS

 9.3. Size:155K  vishay
 sqj412ep.pdf pdf_icon

SQJ416EP

SQJ412EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0041 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0052 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.

MOSTRAR MÁS

Otros transistores... SQJ158EP, SQJ200EP, SQJ202EP, SQJ260EP, SQJ262EP, SQJ407EP, SQJ409EP, SQJ414EP, 10N65, SQJ418EP, SQJ420EP, SQJ433EP, SQJ446EP, SQJ454EP, SQJ457EP, SQJ464EP, SQJ474EP