All MOSFET. SQJ416EP Datasheet

 

SQJ416EP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQJ416EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8

 SQJ416EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJ416EP Datasheet (PDF)

 ..1. Size:282K  vishay
 sqj416ep.pdf

SQJ416EP SQJ416EP

SQJ416EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.030 100 % Rg and UIS testedID (A) 27 Material categorization:Configuration Singlefor definitions of compliance please seePackage PowerPAK SO-8Lwww.vishay.com/

 9.1. Size:154K  vishay
 sqj410ep.pdf

SQJ416EP SQJ416EP

SQJ410EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0039 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0042 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

 9.2. Size:267K  vishay
 sqj414ep.pdf

SQJ416EP SQJ416EP

SQJ414EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 30GRDS

 9.3. Size:155K  vishay
 sqj412ep.pdf

SQJ416EP SQJ416EP

SQJ412EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0041 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0052 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

 9.4. Size:276K  vishay
 sqj418ep.pdf

SQJ416EP SQJ416EP

SQJ418EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.014 100 % Rg and UIS testedID (A) 48 Material categorization:Configuration Singlefor definitions of compliance please seePackage PowerPAK SO-8Lwww.vishay.com/

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1314L

 

 
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