All MOSFET. SQJ416EP Datasheet

 

SQJ416EP Datasheet and Replacement


   Type Designator: SQJ416EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO-8
 

 SQJ416EP substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQJ416EP Datasheet (PDF)

 ..1. Size:282K  vishay
sqj416ep.pdf pdf_icon

SQJ416EP

SQJ416EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.030 100 % Rg and UIS testedID (A) 27 Material categorization:Configuration Singlefor definitions of compliance please seePackage PowerPAK SO-8Lwww.vishay.com/

 9.1. Size:154K  vishay
sqj410ep.pdf pdf_icon

SQJ416EP

SQJ410EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0039 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0042 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

 9.2. Size:267K  vishay
sqj414ep.pdf pdf_icon

SQJ416EP

SQJ414EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 30GRDS

 9.3. Size:155K  vishay
sqj412ep.pdf pdf_icon

SQJ416EP

SQJ412EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0041 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0052 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

Datasheet: SQJ158EP , SQJ200EP , SQJ202EP , SQJ260EP , SQJ262EP , SQJ407EP , SQJ409EP , SQJ414EP , STP80NF70 , SQJ418EP , SQJ420EP , SQJ433EP , SQJ446EP , SQJ454EP , SQJ457EP , SQJ464EP , SQJ474EP .

Keywords - SQJ416EP MOSFET datasheet

 SQJ416EP cross reference
 SQJ416EP equivalent finder
 SQJ416EP lookup
 SQJ416EP substitution
 SQJ416EP replacement

 

 
Back to Top

 


 
.