FDD5N50U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD5N50U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 11 nC
Resistencia drenaje-fuente RDS(on): 2 Ohm
Empaquetado / Estuche: TO252, DPAK
Búsqueda de reemplazo de MOSFET FDD5N50U
FDD5N50U Datasheet (PDF)
1.1. fdd5n50u.pdf 
Size:645K _fairchild_semi
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especia
3.1. fdd5n50f.pdf Size:752K _fairchild_semi
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially
3.2. fdd5n50nz.pdf Size:548K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to
3.3. fdd5n50.pdf Size:503K _fairchild_semi
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to
3.4. fdd5n50nzf.pdf Size:564K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailore
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
