FDD5N50U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD5N50U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de FDD5N50U MOSFET
FDD5N50U Datasheet (PDF)
fdd5n50u.pdf

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h
fdd5n50u.pdf

FDD5N50UN-Channel UniFETTM Ultra FRFETTM MOSFET500 V, 3 A, 2.0 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 AThis MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance
fdd5n50f.pdf

December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has
fdd5n50.pdf

December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall
Otros transistores... FDD5612 , FDD5614P , FDD5670 , FDD5810F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , IRFP064N , FDD5N53 , FDD6530A , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS .
History: 15N25 | HFB1N65S | IRFP452FI | 12N65KL-TA
History: 15N25 | HFB1N65S | IRFP452FI | 12N65KL-TA



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