FDD5N50U
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD5N50U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO252
DPAK
FDD5N50U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD5N50U
Datasheet (PDF)
..1. Size:645K fairchild semi
fdd5n50u.pdf 
December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h
..2. Size:833K onsemi
fdd5n50u.pdf
FDD5N50UN-Channel UniFETTM Ultra FRFETTM MOSFET500 V, 3 A, 2.0 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 AThis MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance
7.1. Size:752K fairchild semi
fdd5n50f.pdf
December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has
7.2. Size:503K fairchild semi
fdd5n50.pdf
December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall
7.3. Size:548K fairchild semi
fdd5n50nz.pdf
November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially
7.4. Size:564K fairchild semi
fdd5n50nzf.pdf
November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp
7.5. Size:841K onsemi
fdd5n50.pdf
FDD5N50N-Channel UniFETTM MOSFETDescription500 V, 4 A, 1.4 UniFETTM MOSFET is ON Semiconductors high voltage FeaturesMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 Aprovide better switching performance and higher avalanche Low Gate Charge (Typ.
7.6. Size:765K onsemi
fdd5n50ftm-ws.pdf
FDD5N50FTM-WSN-Channel UniFETTM FRFET MOSFET 500 V, 3.5 A, 1.55 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 1.25 (Typ.) @ VGS = 10 V, ID = 1.75 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC)provide better switching performa
7.7. Size:713K onsemi
fdd5n50nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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