SQJ958EP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ958EP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0349 Ohm

Encapsulados: SO-8

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SQJ958EP datasheet

 ..1. Size:225K  vishay
 sqj958ep.pdf pdf_icon

SQJ958EP

SQJ958EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0349 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0385 Material categorization ID (A) per leg 20 For definitions of compliance please see Configuration

 9.1. Size:173K  vishay
 sqj951ep.pdf pdf_icon

SQJ958EP

SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.017 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Dual Complia

 9.2. Size:216K  vishay
 sqj952ep.pdf pdf_icon

SQJ958EP

SQJ952EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.020 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.024 Material categorization ID (A) per leg 23 for definitions of compliance please see Configuratio

 9.3. Size:224K  vishay
 sqj956ep.pdf pdf_icon

SQJ958EP

SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0267 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0290 Material categorization ID (A) per leg 23 For definitions of compliance please see Configuration

MOSTRAR MÁS

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