SQS401ENW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQS401ENW
Código: Q023
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 62.5 W
Tensión drenaje-fuente |Vds|: 40 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 16 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V
Carga de compuerta (Qg): 17.7 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 245 pF
Resistencia drenaje-fuente RDS(on): 0.029 Ohm
Empaquetado / Estuche: POWERPAK-1212-8W
Búsqueda de reemplazo de MOSFET SQS401ENW
SQS401ENW Datasheet (PDF)
..1. sqs401enw.pdf 
Size:214K _vishay
SQS401ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.029 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.047 Material categorization: ID (A) -16for definitions of compliance please seeConfiguration Singlew
6.1. sqs401en.pdf Size:559K _vishay
SQS401ENwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.029 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.047 AEC-Q101 QualifieddID (A) - 16 100 % Rg and UIS TestedConfiguration Single Complian
9.1. sqs405en.pdf Size:553K _vishay
SQS405ENwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 12 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.026ID (A) - 16 Material categorization:For definitions of compliance please see Configuration Si
9.2. sqs400en.pdf Size:557K _vishay
SQS400ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.018 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 AEC-Q101 QualifieddID (A) 16 100 % Rg and UIS TestedConfiguration Single Compliant to RoH
9.3. sqs404en.pdf Size:556K _vishay
SQS404ENwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.015 AEC-Q101 QualifieddRDS(on) () at VGS = 2.5 V 0.022 100 % Rg and UIS TestedID (A) 16 Co
9.4. sqs405enw.pdf Size:198K _vishay
SQS405ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.020 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.026 Wettable flank terminalsID (A) -16Configuration Single Material categorization:for definitio
Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
