SUM70060E Todos los transistores

SUM70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0056 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0062 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-263

SUM70N03-09CP Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Optimized for High- or Low-Side V(BR)DSS (V) rDS(on) (W) ID (A) D New Low Thermal Resistance Package 0.0095 @ VGS = 20 V 70 D 100% Rg Tested 30 30 0.014 @ VGS = 4.5 V 58 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-263 DRAIN connected to TAB

SUM70N04-07L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0074 at VGS = 10 V 70a RoHS* 40 Low Threshold 0.011 at VGS = 4.5 V COMPLIANT 67 APPLICATIONS Motor Control D TO-263 G G D S S Top View Ordering Information SUM70N