All MOSFET. SUM70060E Datasheet


SUM70060E MOSFET. Datasheet pdf. Equivalent

Type Designator: SUM70060E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 131 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 53.5 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 1395 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm

Package: TO-263

SUM70060E Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SUM70060E Datasheet (PDF)

 ..1. Size:190K  vishay


SUM70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0056 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0062 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-263

 9.1. Size:67K  vishay


SUM70N03-09CPVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD Optimized for High- or Low-SideV(BR)DSS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance Package0.0095 @ VGS = 20 V 70D 100% Rg Tested30300.014 @ VGS = 4.5 V 58APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersDTO-263DRAIN connected to TAB

 9.2. Size:162K  vishay


SUM70N04-07LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0074 at VGS = 10 V70aRoHS*40 Low Threshold0.011 at VGS = 4.5 V COMPLIANT67APPLICATIONS Motor ControlDTO-263GG D SSTop ViewOrdering Information: SUM70N

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


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