10N65KL-T2Q-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 10N65KL-T2Q-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-262

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10N65KL-T2Q-T Datasheet (PDF)

..1. Size:229K utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf3-t 10n65kg-tf3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t 10n65kl-t2q-t 10n65kg-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

5.1. Size:215K utc
10n65kl-ta3-t 10n65kg-ta3-t 10n65kl-tf1-t 10n65kg-tf1-t 10n65kl-tf2-t 10n65kg-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

5.2. Size:215K utc
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stb10n65k3 stfi10n65k3 stp10n65k3.pdf

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

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8.3. Size:227K utc
10n65k.pdf

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svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

8.5. Size:1328K samwin
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

8.6. Size:952K samwin
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SW10N65K2 N-channel Enhanced mode TO-220F/TO-252/TO-263 MOSFET Features TO-220F TO-252 TO-263 BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.3)@VGS=10V RDS(ON) : 0.3 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: Charge, LED, PC Power 1. Gate 2. Drain 3. Sou

8.7. Size:706K convert
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nvertSuzhou Convert Semiconductor Co ., Ltd.CS10N65F,CS10N65P,CS10N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS10N65F TO-220F CS1

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