10N65KL-T2Q-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 10N65KL-T2Q-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31.3 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-262
10N65KL-T2Q-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
10N65KL-T2Q-T Datasheet (PDF)
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History: IXFK72N20
History: IXFK72N20
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