STT03N10 Todos los transistores

 

STT03N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STT03N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

STT03N10 Datasheet (PDF)

 ..1. Size:134K  samhop
 stt03n10.pdf pdf_icon

STT03N10

GreenProductSTT03N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.235 @ VGS=10VSurface Mount Package.100V 2.5A300 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

 8.1. Size:127K  samhop
 stt03n20.pdf pdf_icon

STT03N10

GreenProductSTT03N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.2.43 @ VGS=10VSurface Mount Package.200V 0.7A2.66 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA

 9.1. Size:134K  samhop
 stt03l06.pdf pdf_icon

STT03N10

GreenProductSTT03L06aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100 @ VGS=10VSurface Mount Package.60V 3A125 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

 9.2. Size:134K  samhop
 stt03l03.pdf pdf_icon

STT03N10

GreenProductSTT03L03aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.104 @ VGS=10VSurface Mount Package.30V 3A149 @ VGS=4.5V ESD Protected.D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM

MOSTRAR MÁS

Otros transistores... FDD5N53 , FDD6530A , FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , 50N06 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 .

History: KI2325DS | RSD046P05FRA | CS6N120P

 

 
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