STT03N10 Datasheet. Specs and Replacement

Type Designator: STT03N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: SOT223

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STT03N10 datasheet

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STT03N10

Green Product STT03N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 235 @ VGS=10V Surface Mount Package. 100V 2.5A 300 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒

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STT03N10

Green Product STT03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 2.43 @ VGS=10V Surface Mount Package. 200V 0.7A 2.66 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA... See More ⇒

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STT03N10

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STT03N10

Green Product STT03L03 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 104 @ VGS=10V Surface Mount Package. 30V 3A 149 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM... See More ⇒

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Detailed specifications: FDD5N53, FDD6530A, FDD6630A, STT03N20, FDD6635, FDD6637, FDD6637F085, FDD6680AS, IRF540N, FDD6685, FDD6760A, FDD6770A, FDD6778A, FDD6780A, FDD6796A, FDD6N20TM, STT03L06

Keywords - STT03N10 MOSFET specs

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