FDD6760A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD6760A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO252 DPAK

Búsqueda de reemplazo de MOSFET FDD6760A

FDD6760A Datasheet (PDF)

..1. Size:323K fairchild semi
fdd6760a.pdf

January 2009FDD6760AN-Channel PowerTrench MOSFET 25 V, 3.2 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 Asynchronous or conventional switching PWM controllers. It has been

..2. Size:287K inchange semiconductor
fdd6760a.pdf

isc N-Channel MOSFET Transistor FDD6760AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =3.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.1. Size:331K fairchild semi
fdd6780a fdu6780a f071.pdf

January 2009FDD6780A / FDU6780A_F071N-Channel PowerTrench MOSFET 25 V, 8.6 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 Asynchronous or conventional switching PWM contro

9.2. Size:310K fairchild semi
fdd6770a.pdf

January 2009FDD6770AN-Channel PowerTrench MOSFET 25 V, 4.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 Asynchronous or conventional switching PWM controllers. It has bee

9.3. Size:319K fairchild semi
fdd6796a fdu6796a f071.pdf

March 2009FDD6796A / FDU6796A_F071N-Channel PowerTrench MOSFET 25 V, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 Asynchronous or conventional switching PWM controller

9.4. Size:297K fairchild semi
fdd6780.pdf

June 2009FDD6780N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 Asynchronous or conventional switching PWM controllers. It has

9.5. Size:296K fairchild semi
fdd6796.pdf

June 2009FDD6796N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 Asynchronous or conventional switching PWM controllers. It has b

9.6. Size:326K fairchild semi
fdd6776a.pdf

January 2009FDD6776A / FDU6776A_F071N-Channel PowerTrench MOSFET 25 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 Asynchronous or conventional switching PWM control

9.7. Size:324K fairchild semi
fdd6782a.pdf

January 2009FDD6782AN-Channel PowerTrench MOSFET 25 V, 10.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 Asynchronous or conventional switching PWM controllers. It has

9.8. Size:313K fairchild semi
fdd6778a.pdf

January 2009FDD6778AN-Channel PowerTrench MOSFET 25 V, 14.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 Asynchronous or conventional switching PWM controllers. It has

9.9. Size:287K inchange semiconductor
fdd6770a.pdf

isc N-Channel MOSFET Transistor FDD6770AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

9.10. Size:288K inchange semiconductor
fdd6780a.pdf

isc N-Channel MOSFET Transistor FDD6780AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =8.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.11. Size:287K inchange semiconductor
fdd6796a.pdf

isc N-Channel MOSFET Transistor FDD6796AFEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.12. Size:287K inchange semiconductor
fdd6796.pdf

isc N-Channel MOSFET Transistor FDD6796FEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

9.13. Size:287K inchange semiconductor
fdd6776a.pdf

isc N-Channel MOSFET Transistor FDD6776AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.14. Size:288K inchange semiconductor
fdd6782a.pdf

isc N-Channel MOSFET Transistor FDD6782AFEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.15. Size:287K inchange semiconductor
fdd6778a.pdf

isc N-Channel MOSFET Transistor FDD6778AFEATURESDrain Current : I =10A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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