FDD6760A Todos los transistores

 

FDD6760A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD6760A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD6760A datasheet

 ..1. Size:323K  fairchild semi
fdd6760a.pdf pdf_icon

FDD6760A

January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been

 ..2. Size:287K  inchange semiconductor
fdd6760a.pdf pdf_icon

FDD6760A

isc N-Channel MOSFET Transistor FDD6760A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =3.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.1. Size:331K  fairchild semi
fdd6780a fdu6780a f071.pdf pdf_icon

FDD6760A

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro

 9.2. Size:310K  fairchild semi
fdd6770a.pdf pdf_icon

FDD6760A

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee

Otros transistores... FDD6630A , STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , IRFZ44 , FDD6770A , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 .

History: STT03N10 | FDD6680AS

 

 

 


 
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