All MOSFET. FDD6760A Datasheet

 

FDD6760A MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD6760A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 44 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: TO252, DPAK

FDD6760A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6760A Datasheet (PDF)

0.1. fdd6760a.pdf Size:323K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6760A N-Channel PowerTrench® MOSFET 25 V, 3.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been

9.1. fdd6780a fdu6780a f071.pdf Size:331K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro

9.2. fdd6782a.pdf Size:324K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6782A N-Channel PowerTrench® MOSFET 25 V, 10.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has

 9.3. fdd6778a.pdf Size:313K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6778A N-Channel PowerTrench® MOSFET 25 V, 14.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 mΩ at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has

9.4. fdd6796.pdf Size:296K _fairchild_semi

FDD6760A
FDD6760A

June 2009 FDD6796 N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A synchronous or conventional switching PWM controllers. It has b

 9.5. fdd6776a.pdf Size:326K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench® MOSFET 25 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control

9.6. fdd6796a fdu6796a f071.pdf Size:319K _fairchild_semi

FDD6760A
FDD6760A

March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench® MOSFET 25 V, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controller

9.7. fdd6770a.pdf Size:310K _fairchild_semi

FDD6760A
FDD6760A

January 2009 FDD6770A N-Channel PowerTrench® MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee

9.8. fdd6780.pdf Size:297K _fairchild_semi

FDD6760A
FDD6760A

June 2009 FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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