FDD6780A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD6780A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
Paquete / Cubierta: TO252 DPAK

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FDD6780A Datasheet (PDF)

..1. Size:331K fairchild semi
fdd6780a fdu6780a f071.pdf

January 2009FDD6780A / FDU6780A_F071N-Channel PowerTrench MOSFET 25 V, 8.6 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 Asynchronous or conventional switching PWM contro

..2. Size:288K inchange semiconductor
fdd6780a.pdf

isc N-Channel MOSFET Transistor FDD6780AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =8.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

7.1. Size:297K fairchild semi
fdd6780.pdf

June 2009FDD6780N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 Asynchronous or conventional switching PWM controllers. It has

8.1. Size:324K fairchild semi
fdd6782a.pdf

January 2009FDD6782AN-Channel PowerTrench MOSFET 25 V, 10.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 Asynchronous or conventional switching PWM controllers. It has

8.2. Size:288K inchange semiconductor
fdd6782a.pdf

isc N-Channel MOSFET Transistor FDD6782AFEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , P55NF06 , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM .

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