FDD6780A datasheet, аналоги, основные параметры

Наименование производителя: FDD6780A  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 32.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD6780A

- подборⓘ MOSFET транзистора по параметрам

 

FDD6780A даташит

 ..1. Size:331K  fairchild semi
 fdd6780a fdu6780a f071.pdf pdf_icon

FDD6780A

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro

 ..2. Size:288K  inchange semiconductor
 fdd6780a.pdf pdf_icon

FDD6780A

isc N-Channel MOSFET Transistor FDD6780A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =8.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.1. Size:297K  fairchild semi
 fdd6780.pdf pdf_icon

FDD6780A

June 2009 FDD6780 N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has

 8.1. Size:324K  fairchild semi
 fdd6782a.pdf pdf_icon

FDD6780A

January 2009 FDD6782A N-Channel PowerTrench MOSFET 25 V, 10.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has

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