FDD6796A Todos los transistores

 

FDD6796A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD6796A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD6796A Datasheet (PDF)

 ..1. Size:319K  fairchild semi
fdd6796a fdu6796a f071.pdf pdf_icon

FDD6796A

March 2009FDD6796A / FDU6796A_F071N-Channel PowerTrench MOSFET 25 V, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 Asynchronous or conventional switching PWM controller

 ..2. Size:287K  inchange semiconductor
fdd6796a.pdf pdf_icon

FDD6796A

isc N-Channel MOSFET Transistor FDD6796AFEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.1. Size:296K  fairchild semi
fdd6796.pdf pdf_icon

FDD6796A

June 2009FDD6796N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 Asynchronous or conventional switching PWM controllers. It has b

 7.2. Size:287K  inchange semiconductor
fdd6796.pdf pdf_icon

FDD6796A

isc N-Channel MOSFET Transistor FDD6796FEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , IRF640N , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 .

History: FCH104N60FF085 | RJK005N03FRA | FXN4625F | NTDV20P06L | SSW80R240S

 

 
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