FDD6796A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD6796A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 25
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 40
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057
Ohm
Paquete / Cubierta:
TO252
DPAK
Búsqueda de reemplazo de FDD6796A MOSFET
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Selección ⓘ de transistores por parámetros
FDD6796A datasheet
..1. Size:319K fairchild semi
fdd6796a fdu6796a f071.pdf 
March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench MOSFET 25 V, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controller
..2. Size:287K inchange semiconductor
fdd6796a.pdf
isc N-Channel MOSFET Transistor FDD6796A FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
7.1. Size:296K fairchild semi
fdd6796.pdf
June 2009 FDD6796 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 A synchronous or conventional switching PWM controllers. It has b
7.2. Size:287K inchange semiconductor
fdd6796.pdf
isc N-Channel MOSFET Transistor FDD6796 FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
9.1. Size:331K fairchild semi
fdd6780a fdu6780a f071.pdf
January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro
9.2. Size:310K fairchild semi
fdd6770a.pdf
January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee
9.3. Size:323K fairchild semi
fdd6760a.pdf
January 2009 FDD6760A N-Channel PowerTrench MOSFET 25 V, 3.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 A synchronous or conventional switching PWM controllers. It has been
9.4. Size:297K fairchild semi
fdd6780.pdf
June 2009 FDD6780 N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has
9.5. Size:326K fairchild semi
fdd6776a.pdf
January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench MOSFET 25 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control
9.6. Size:324K fairchild semi
fdd6782a.pdf
January 2009 FDD6782A N-Channel PowerTrench MOSFET 25 V, 10.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has
9.7. Size:313K fairchild semi
fdd6778a.pdf
January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has
9.8. Size:287K inchange semiconductor
fdd6770a.pdf
isc N-Channel MOSFET Transistor FDD6770A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
9.9. Size:288K inchange semiconductor
fdd6780a.pdf
isc N-Channel MOSFET Transistor FDD6780A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =8.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.10. Size:287K inchange semiconductor
fdd6760a.pdf
isc N-Channel MOSFET Transistor FDD6760A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =3.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.11. Size:287K inchange semiconductor
fdd6776a.pdf
isc N-Channel MOSFET Transistor FDD6776A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:288K inchange semiconductor
fdd6782a.pdf
isc N-Channel MOSFET Transistor FDD6782A FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =10.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.13. Size:287K inchange semiconductor
fdd6778a.pdf
isc N-Channel MOSFET Transistor FDD6778A FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
Otros transistores... FDD6637F085
, FDD6680AS
, STT03N10
, FDD6685
, FDD6760A
, FDD6770A
, FDD6778A
, FDD6780A
, IRFB4110
, FDD6N20TM
, STT03L06
, FDD6N25
, FDD6N50
, FDD6N50F
, FDD6N50TMF085
, FDD7N20TM
, STT03L03
.
