FDD6796A - описание и поиск аналогов

 

Аналоги FDD6796A. Основные параметры


   Наименование производителя: FDD6796A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FDD6796A

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD6796A даташит

 ..1. Size:319K  fairchild semi
fdd6796a fdu6796a f071.pdfpdf_icon

FDD6796A

March 2009 FDD6796A / FDU6796A_F071 N-Channel PowerTrench MOSFET 25 V, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controller

 ..2. Size:287K  inchange semiconductor
fdd6796a.pdfpdf_icon

FDD6796A

isc N-Channel MOSFET Transistor FDD6796A FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.1. Size:296K  fairchild semi
fdd6796.pdfpdf_icon

FDD6796A

June 2009 FDD6796 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 A synchronous or conventional switching PWM controllers. It has b

 7.2. Size:287K  inchange semiconductor
fdd6796.pdfpdf_icon

FDD6796A

isc N-Channel MOSFET Transistor FDD6796 FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

Другие MOSFET... FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , IRFB4110 , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 .

 

 

 


 
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