March 2009FDD6796A / FDU6796A_F071N-Channel PowerTrench MOSFET 25 V, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 15.0 m at VGS = 4.5 V, ID = 15.2 Asynchronous or conventional switching PWM controller

isc N-Channel MOSFET Transistor FDD6796AFEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

June 2009FDD6796N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.7 m at VGS = 10 V, ID = 20 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 9.0 m at VGS = 4.5 V, ID = 15.5 Asynchronous or conventional switching PWM controllers. It has b

isc N-Channel MOSFET Transistor FDD6796FEATURESDrain Current : I =40A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

January 2009FDD6780A / FDU6780A_F071N-Channel PowerTrench MOSFET 25 V, 8.6 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 Asynchronous or conventional switching PWM contro

January 2009FDD6770AN-Channel PowerTrench MOSFET 25 V, 4.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 Asynchronous or conventional switching PWM controllers. It has bee

January 2009FDD6760AN-Channel PowerTrench MOSFET 25 V, 3.2 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.2 m at VGS = 10 V, ID = 27 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 21 Asynchronous or conventional switching PWM controllers. It has been

June 2009FDD6780N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 Asynchronous or conventional switching PWM controllers. It has

January 2009FDD6776A / FDU6776A_F071N-Channel PowerTrench MOSFET 25 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 Asynchronous or conventional switching PWM control

January 2009FDD6782AN-Channel PowerTrench MOSFET 25 V, 10.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 Asynchronous or conventional switching PWM controllers. It has

January 2009FDD6778AN-Channel PowerTrench MOSFET 25 V, 14.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 Asynchronous or conventional switching PWM controllers. It has

isc N-Channel MOSFET Transistor FDD6770AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6780AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =8.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDD6760AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =3.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDD6776AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDD6782AFEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDD6778AFEATURESDrain Current : I =10A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d