12N80G-T47-T Todos los transistores

 

12N80G-T47-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 12N80G-T47-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 123 nC
   trⓘ - Tiempo de subida: 198 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-247
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12N80G-T47-T Datasheet (PDF)

 ..1. Size:240K  utc
12n80l-t47-t 12n80g-t47-t 12n80l-t3p-t 12n80g-t3p-t 12n80l-tc3-t 12n80g-tc3-t 12n80l-tf2-t 12n80g-tf2-t.pdf pdf_icon

12N80G-T47-T

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta

 6.1. Size:421K  utc
12n80l-ta3-t 12n80g-ta3-t 12n80l-tf1-t 12n80g-tf1-t 12n80l-tf3-t 12n80g-tf3-t 12n80l-t3p-t 12n80g-t3p-t.pdf pdf_icon

12N80G-T47-T

UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220 TO-220FThe UTC 12N80-FC provide excellent R , low gate charge DS(ON)and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 1 FEATURES * R 0.78 @ V =10V, I =6.0A DS(ON) GS DTO-220F1 TO-3P

 9.1. Size:232K  utc
12n80.pdf pdf_icon

12N80G-T47-T

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs

 9.2. Size:525K  jiaensemi
jfpc2n80c jffm12n80c.pdf pdf_icon

12N80G-T47-T

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 12N45A | 12N70L-TF1-T

 

 
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