12N80G-T47-T
MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N80G-T47-T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 360
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 123
nC
trⓘ - Rise Time: 198
nS
Cossⓘ -
Output Capacitance: 315
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO-247
12N80G-T47-T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N80G-T47-T
Datasheet (PDF)
9.1. Size:232K utc
12n80.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs
9.2. Size:525K jiaensemi
jfpc2n80c jffm12n80c.pdf
JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S
9.3. Size:502K trinnotech
tman12n80z.pdf
TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A
9.4. Size:505K trinnotech
tman12n80az.pdf
TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A
9.5. Size:674K way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf
WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo
9.6. Size:449K convert
cs12n80f cs12n80v.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N80F, CS12N80V800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N80F TO-220F CS12N80FC
9.7. Size:4008K first semi
fir12n80fg.pdf
FIR12N80FG800V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 45nC (Typ.) BVDSS=800V,ID=12AG D S RDS(on) :1.0 (Max) @VG=10V 100% Avalanche TestedMarking DiagramD G S Y = YearA = Assembly LocationWW = Work Week
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