12N80G-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 12N80G-TF3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 217 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
Paquete / Cubierta: TO-220F
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12N80G-TF3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta
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UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs
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JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S
Otros transistores... 12N80G-TC3-T , 12N80L-TF2-T , 12N80G-TF2-T , 12N80L-TA3-T , 12N80G-TA3-T , 12N80L-TF1-T , 12N80G-TF1-T , 12N80L-TF3-T , IRFP450 , 12P10G-AA3-R , 12P10L-TA3-T , 12P10G-TA3-T , 12P10L-TM3-T , 12P10G-TM3-T , 12P10L-TMS-T , 12P10G-TMS-T , 12P10L-TMS2-T .
History: STB100NF04T4 | AP2309GN | 15N12
History: STB100NF04T4 | AP2309GN | 15N12



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