All MOSFET. 12N80G-TF3-T Datasheet

 

12N80G-TF3-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 12N80G-TF3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: TO-220F

 12N80G-TF3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

12N80G-TF3-T Datasheet (PDF)

 ..1. Size:421K  utc
12n80l-ta3-t 12n80g-ta3-t 12n80l-tf1-t 12n80g-tf1-t 12n80l-tf3-t 12n80g-tf3-t 12n80l-t3p-t 12n80g-t3p-t.pdf

12N80G-TF3-T
12N80G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220 TO-220FThe UTC 12N80-FC provide excellent R , low gate charge DS(ON)and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 1 FEATURES * R 0.78 @ V =10V, I =6.0A DS(ON) GS DTO-220F1 TO-3P

 5.1. Size:240K  utc
12n80l-t47-t 12n80g-t47-t 12n80l-t3p-t 12n80g-t3p-t 12n80l-tc3-t 12n80g-tc3-t 12n80l-tf2-t 12n80g-tf2-t.pdf

12N80G-TF3-T
12N80G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta

 9.1. Size:232K  utc
12n80.pdf

12N80G-TF3-T
12N80G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs

 9.2. Size:525K  jiaensemi
jfpc2n80c jffm12n80c.pdf

12N80G-TF3-T
12N80G-TF3-T

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

 9.3. Size:502K  trinnotech
tman12n80z.pdf

12N80G-TF3-T
12N80G-TF3-T

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

 9.4. Size:505K  trinnotech
tman12n80az.pdf

12N80G-TF3-T
12N80G-TF3-T

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

 9.5. Size:674K  way-on
wml12n80m3 wmn12n80m3 wmm12n80m3 wmo12n80m3 wmp12n80m3 wmk12n80m3.pdf

12N80G-TF3-T
12N80G-TF3-T

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80MWMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

 9.6. Size:449K  convert
cs12n80f cs12n80v.pdf

12N80G-TF3-T
12N80G-TF3-T

nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N80F, CS12N80V800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N80F TO-220F CS12N80FC

 9.7. Size:4008K  first semi
fir12n80fg.pdf

12N80G-TF3-T
12N80G-TF3-T

FIR12N80FG800V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 45nC (Typ.) BVDSS=800V,ID=12AG D S RDS(on) :1.0 (Max) @VG=10V 100% Avalanche TestedMarking DiagramD G S Y = YearA = Assembly LocationWW = Work Week

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top