12N80G-TF3-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N80G-TF3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 217 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO-220F
12N80G-TF3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N80G-TF3-T Datasheet (PDF)
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