FDD6N50TMF085 Todos los transistores

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

FDD6N50TM-F085 500V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Features proprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC) minimize on-state resistance, provide s

isc N-Channel MOSFET Transistor FDD6N50TM FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid