FDD6N50TM_F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD6N50TM_F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12.8 nC
Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
Package: TO252, DPAK
FDD6N50TM_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD6N50TM_F085 Datasheet (PDF)
0.1. fdd6n50tm f085.pdf 
Size:941K _fairchild_semi
November 2010 FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tailored to
3.1. fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf Size:458K _fairchild_semi
November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 9 p
7.1. fdd6n50f fdu6n50f.pdf Size:648K _fairchild_semi
July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar • Low gate charge ( Typ. 15nC) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF) This advance technology has
7.2. fdd6n50 fdu6n50.pdf Size:851K _fairchild_semi
January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 12.8 nC) stripe, DMOS technology. • Low Crss ( typical 9 pF) This advanced technology has been especially tai
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