FDD6N50TMF085 Datasheet and Replacement
Type Designator: FDD6N50TMF085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO252 DPAK
FDD6N50TMF085 substitution
FDD6N50TMF085 Datasheet (PDF)
fdd6n50tm f085.pdf

November 2010FDD6N50TM_F085500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailored to
fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf

November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p
fdd6n50tm-f085.pdf

FDD6N50TM-F085 500V N-Channel MOSFETDescriptionThese N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Featuresproprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC)minimize on-state resistance, provide s
fdd6n50tm.pdf

isc N-Channel MOSFET Transistor FDD6N50TMFEATURESDrain Current : I =6A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , IRFB4227 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424HF085 , STT02N10 , FDD8444 .
History: 2SJ546
Keywords - FDD6N50TMF085 MOSFET datasheet
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History: 2SJ546



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