1N65L-K08-5060-R Todos los transistores

 

1N65L-K08-5060-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1N65L-K08-5060-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12.5 Ohm
   Paquete / Cubierta: DFN5060-8
     - Selección de transistores por parámetros

 

1N65L-K08-5060-R Datasheet (PDF)

 0.1. Size:328K  utc
 1n65l-tn3-r 1n65g-tn3-r 1n65l-t60-k 1n65g-t60-k 1n65l-t92-b 1n65g-t92-b 1n65l-t92-k 1n65g-t92-k 1n65l-k08-5060-r 1n65g-k08-5060-r.pdf pdf_icon

1N65L-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 8.1. Size:328K  utc
 1n65l-aa3-r 1n65g-aa3-r 1n65l-ta3-t 1n65g-ta3-t 1n65l-tf3-t 1n65g-tf3-t 1n65l-tm3-t 1n65g-tm3-t 1n65l-tma-t 1n65g-tma-t.pdf pdf_icon

1N65L-K08-5060-R

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 11SOT-223 TO-92 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged TO-220TO-220Favalanche characteristics. This power MOSFET is usually used i

 9.1. Size:317K  ubiq
 qm01n65l.pdf pdf_icon

1N65L-K08-5060-R

QM01N65L 1 2011-06-15 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM01N65L is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 12 0.2Amost of the synchronous buck converterapplications . Applications The QM01N65L meet the RoHS and

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History: SVD640D | MTB75N05HDT4 | SRC65R042B | HY3708PS | IXFY9130 | 2N6904 | 2SK3357

 

 
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