20N70KL-TF2-T Todos los transistores

 

20N70KL-TF2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 20N70KL-TF2-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 54 nC
   Tiempo de subida (tr): 35 nS
   Conductancia de drenaje-sustrato (Cd): 220 pF
   Resistencia entre drenaje y fuente RDS(on): 0.65 Ohm
   Paquete / Cubierta: TO-220F

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20N70KL-TF2-T Datasheet (PDF)

 ..1. Size:422K  utc
20n70kl-tf2-t 20n70kg-tf2-t.pdf

20N70KL-TF2-T
20N70KL-TF2-T

UNISONIC TECHNOLOGIES CO., LTD 20N70K-MT Power MOSFET 20A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N70K-MT is an N-channel Power MOSFET using1UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. TO-220F2 The UTC 20N70K-MT is generally applied in high efficient DC to DC converters, PWM motor co

 8.1. Size:696K  samwin
swf20n70k.pdf

20N70KL-TF2-T
20N70KL-TF2-T

SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V ID : 20A High ruggedness Low RDS(ON) (Typ 0.17)@VGS=10V RDS(ON) : 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

 9.1. Size:952K  mcc
mcp20n70.pdf

20N70KL-TF2-T
20N70KL-TF2-T

MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range: -55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance:

 9.2. Size:1028K  pipsemi
ptp20n70a pta20n70a.pdf

20N70KL-TF2-T
20N70KL-TF2-T

PTP20N70A PTA20N70A 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 700V 0.50 20A RDS(ON),typ.=0.50 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power G G SMPS Power Supply D D S S LCD Panel Power TO-220 TO-220F Ordering Information P

 9.3. Size:1344K  way-on
wml20n70d1 wmk20n70d1.pdf

20N70KL-TF2-T
20N70KL-TF2-T

WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42@V =10V

 9.4. Size:987K  convert
ctu20n700.pdf

20N70KL-TF2-T
20N70KL-TF2-T

nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev

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