20N70KL-TF2-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 20N70KL-TF2-T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 54 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO-220F
Аналог (замена) для 20N70KL-TF2-T
20N70KL-TF2-T Datasheet (PDF)
20n70kl-tf2-t 20n70kg-tf2-t.pdf
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swf20n70k.pdf
SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V ID : 20A High ruggedness Low RDS(ON) (Typ 0.17)@VGS=10V RDS(ON) : 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
mcp20n70.pdf
MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range: -55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance:
ptp20n70a pta20n70a.pdf
PTP20N70A PTA20N70A 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 700V 0.50 20A RDS(ON),typ.=0.50 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power G G SMPS Power Supply D D S S LCD Panel Power TO-220 TO-220F Ordering Information P
wml20n70d1 wmk20n70d1.pdf
WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42@V =10V
ctu20n700.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev
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