20N70KG-TF2-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 20N70KG-TF2-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de 20N70KG-TF2-T MOSFET
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20N70KG-TF2-T datasheet
20n70kl-tf2-t 20n70kg-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 20N70K-MT Power MOSFET 20A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N70K-MT is an N-channel Power MOSFET using 1 UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. TO-220F2 The UTC 20N70K-MT is generally applied in high efficient DC to DC converters, PWM motor co
swf20n70k.pdf
SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 700V ID 20A High ruggedness Low RDS(ON) (Typ 0.17 )@VGS=10V RDS(ON) 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
mcp20n70.pdf
MCP20N70 Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on) Qg N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Field Effect Transistor Maximum Ratings Operating Junction Temperature Range -55 C to +150 C TO-220AB(H) Storage Temperature Range -55 C to +150 C Thermal Resistance
Otros transistores... 1N65G-T60-K, 1N65L-T92-B, 1N65G-T92-B, 1N65L-T92-K, 1N65G-T92-K, 1N65L-K08-5060-R, 1N65G-K08-5060-R, 20N70KL-TF2-T, IRF1404, 24NM60L-TA3-T, 24NM60G-TA3-T, 24NM60L-TF1-T, 24NM60G-TF1-T, 24NM60L-TF2-T, 24NM60G-TF2-T, 24NM60L-TF3-T, 24NM60G-TF3-T
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