20N70KG-TF2-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 20N70KG-TF2-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO-220F
Аналог (замена) для 20N70KG-TF2-T
20N70KG-TF2-T Datasheet (PDF)
20n70kl-tf2-t 20n70kg-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 20N70K-MT Power MOSFET 20A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N70K-MT is an N-channel Power MOSFET using1UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. TO-220F2 The UTC 20N70K-MT is generally applied in high efficient DC to DC converters, PWM motor co
swf20n70k.pdf
SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V ID : 20A High ruggedness Low RDS(ON) (Typ 0.17)@VGS=10V RDS(ON) : 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
mcp20n70.pdf
MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range: -55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance:
ruh120n70r.pdf
RUH120N70RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/70A,RDS (ON) =15m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDD
ptp20n70a pta20n70a.pdf
PTP20N70A PTA20N70A 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 700V 0.50 20A RDS(ON),typ.=0.50 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power G G SMPS Power Supply D D S S LCD Panel Power TO-220 TO-220F Ordering Information P
wml20n70d1 wmk20n70d1.pdf
WML20N70D1 WMK20N70D1 700V 20A 0.42 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications TAB requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D D S S Features Typ.R =0.42@V =10V
ctu20n700.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CTU20N700200V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency circuitsDev
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918