24NM60G-TA3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 24NM60G-TA3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 176 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 24 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 76 nC
Tiempo de subida (tr): 48.2 nS
Conductancia de drenaje-sustrato (Cd): 1100 pF
Resistencia entre drenaje y fuente RDS(on): 0.16 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET 24NM60G-TA3-T
24NM60G-TA3-T Datasheet (PDF)
24nm60l-ta3-t 24nm60g-ta3-t 24nm60l-tf1-t 24nm60g-tf1-t 24nm60l-tf2-t 24nm60g-tf2-t 24nm60l-tf3-t 24nm60g-tf3-t 24nm60l-tq2-t 24nm60g-tq2-t 24nm60g-t47s-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo
24nm60l-tq2-r 24nm60g-tq2-r 24nm60l-t3p-t 24nm60g-t3p-t 24nm60l-t3b-t 24nm60g-t3b-t 24nm60l-t3f-t 24nm60g-t3f-t 24nm60l-t47-t 24nm60g-t47-t 24nm60l-t47s-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo
stb24nm60n.pdf
STB24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETDPAKFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STB24NM60N 650 V
stf24nm60n stp24nm60n stw24nm60n.pdf
STF24NM60NSTP24NM60N, STW24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETTO-220FP, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STF24NM60N 650 V
stf24nm60n sti24nm60n stp24nm60n stw24nm60n.pdf
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60NN-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet - production dataTAB Features Order codes VDS @Tjmax RDS(on) max. IDSTF24NM60N3 322 11STI24NM60NI2PAKTO-220FP650 V 0.19 17 ASTP24NM60NTABSTW24NM60N 100% avalanche tested332 L
stl24nm60n.pdf
STL24NM60NN-channel 600 V, 0.200 , 16 A PowerFLAT (8x8) HVMDmesh II Power MOSFETPreliminary dataFeaturesVDSS @ RDS(on) Type IDS(3) Bottom viewTJmax maxS(3)S(3)G(1)STL24NM60N 650 V
stfi24nm60n.pdf
STFI24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STFI24NM60N 650 V
stb24nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB24NM60NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
sti24nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STI24NM60NFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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